JPS6120148B2 - - Google Patents
Info
- Publication number
- JPS6120148B2 JPS6120148B2 JP52060252A JP6025277A JPS6120148B2 JP S6120148 B2 JPS6120148 B2 JP S6120148B2 JP 52060252 A JP52060252 A JP 52060252A JP 6025277 A JP6025277 A JP 6025277A JP S6120148 B2 JPS6120148 B2 JP S6120148B2
- Authority
- JP
- Japan
- Prior art keywords
- data line
- transistor
- region
- capacitance
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6025277A JPS53144692A (en) | 1977-05-23 | 1977-05-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6025277A JPS53144692A (en) | 1977-05-23 | 1977-05-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53144692A JPS53144692A (en) | 1978-12-16 |
| JPS6120148B2 true JPS6120148B2 (en]) | 1986-05-21 |
Family
ID=13136791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6025277A Granted JPS53144692A (en) | 1977-05-23 | 1977-05-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53144692A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061821B2 (ja) * | 1981-11-27 | 1994-01-05 | 株式会社日立製作所 | 半導体装置 |
| US6544844B2 (en) | 1999-10-08 | 2003-04-08 | Macronix International Co., Ltd. | Method for forming a flash memory cell having contoured floating gate surface |
| US6413818B1 (en) | 1999-10-08 | 2002-07-02 | Macronix International Co., Ltd. | Method for forming a contoured floating gate cell |
-
1977
- 1977-05-23 JP JP6025277A patent/JPS53144692A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53144692A (en) | 1978-12-16 |
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